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SIHH26N60E-T1-GE3 Datasheet

SIHH26N60E-T1-GE3 Cover
DatasheetSIHH26N60E-T1-GE3
File Size190.53 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIHH26N60E-T1-GE3
Description MOSFET N-CH 600V 25A POWERPAK8X8

SIHH26N60E-T1-GE3 - Vishay Siliconix

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URL Link

SIHH26N60E-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

135mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

116nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2815pF @ 100V

FET Feature

-

Power Dissipation (Max)

202W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 8 x 8

Package / Case

8-PowerTDFN