Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SIHG80N60E-GE3 |
| File Size | 141.06 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIHG80N60E-GE3 |
| Description | MOSFET N-CH 600V 80A TO247AC |
SIHG80N60E-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SIHG80N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 80A TO247AC | 902 More on Order |
URL Link
www.zouser.com/datasheet/SIHG80N60E-GE3
|
Manufacturer Vishay Siliconix Series E FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 30mOhm @ 40A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 443nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 100V FET Feature - Power Dissipation (Max) 520W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AC Package / Case TO-247-3 |