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SIHB24N65ET5-GE3 Datasheet

SIHB24N65ET5-GE3 Cover
DatasheetSIHB24N65ET5-GE3
File Size208.31 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts SIHB24N65ET5-GE3, SIHB24N65ET1-GE3, SIHB24N65E-GE3
Description MOSFET N-CH 650V 24A TO263, MOSFET N-CH 650V 24A TO263, MOSFET N-CH 650V 24A D2PAK

SIHB24N65ET5-GE3 - Vishay Siliconix

SIHB24N65ET5-GE3 Datasheet Page 1
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SIHB24N65ET5-GE3 Datasheet Page 9

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SIHB24N65ET1-GE3 SIHB24N65ET1-GE3 Vishay Siliconix MOSFET N-CH 650V 24A TO263 454

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SIHB24N65E-GE3 SIHB24N65E-GE3 Vishay Siliconix MOSFET N-CH 650V 24A D2PAK 1851

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URL Link

SIHB24N65ET5-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

E

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

145mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

122nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2740pF @ 100V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D²Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB24N65ET1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

E

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

145mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

122nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2740pF @ 100V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D²Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB24N65E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

145mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

122nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2740pF @ 100V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB