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SIHB12N50E-GE3 Datasheet

SIHB12N50E-GE3 Cover
DatasheetSIHB12N50E-GE3
File Size204.6 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIHB12N50E-GE3
Description MOSFET N-CH 500V 10.5A TO-263

SIHB12N50E-GE3 - Vishay Siliconix

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URL Link

SIHB12N50E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

10.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

886pF @ 100V

FET Feature

-

Power Dissipation (Max)

114W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB