Datasheet | SIHA180N60E-GE3 |
File Size | 151.08 KB |
Total Pages | 8 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SIHA180N60E-GE3 |
Description | MOSFET N-CH TO-220 FULLPAK |
SIHA180N60E-GE3 - Vishay Siliconix
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SIHA180N60E-GE3 | Vishay Siliconix | MOSFET N-CH TO-220 FULLPAK | 2464 More on Order |
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Vishay Siliconix Manufacturer Vishay Siliconix Series E FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1085pF @ 100V FET Feature - Power Dissipation (Max) 33W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Full Pack Package / Case TO-220-3 Full Pack |