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SIF912EDZ-T1-E3 Datasheet

SIF912EDZ-T1-E3 Cover
DatasheetSIF912EDZ-T1-E3
File Size101.37 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIF912EDZ-T1-E3
Description MOSFET 2N-CH 30V 7.4A 6-POWERPAK

SIF912EDZ-T1-E3 - Vishay Siliconix

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SIF912EDZ-T1-E3 SIF912EDZ-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 7.4A 6-POWERPAK 320

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URL Link

SIF912EDZ-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7.4A

Rds On (Max) @ Id, Vgs

19mOhm @ 7.4A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.6W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® 2x5

Supplier Device Package

PowerPAK® (2x5)