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| Datasheet | SIDC09D60E6YX1SA1 |
| File Size | 63.96 KB |
| Total Pages | 4 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIDC09D60E6YX1SA1 |
| Description | DIODE GEN PURP 600V 20A WAFER |
SIDC09D60E6YX1SA1 - Infineon Technologies
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SIDC09D60E6YX1SA1 | Infineon Technologies | DIODE GEN PURP 600V 20A WAFER | 544 More on Order |
URL Link
www.zouser.com/datasheet/SIDC09D60E6YX1SA1
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Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 20A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 20A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 150ns Current - Reverse Leakage @ Vr 27µA @ 600V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case Die Supplier Device Package Sawn on foil Operating Temperature - Junction -55°C ~ 150°C |