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SIB912DK-T1-GE3 Datasheet

SIB912DK-T1-GE3 Cover
DatasheetSIB912DK-T1-GE3
File Size231.86 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIB912DK-T1-GE3
Description MOSFET 2N-CH 20V 1.5A SC-75-6

SIB912DK-T1-GE3 - Vishay Siliconix

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URL Link

SIB912DK-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.5A

Rds On (Max) @ Id, Vgs

216mOhm @ 1.8A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds

95pF @ 10V

Power - Max

3.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SC-75-6L Dual

Supplier Device Package

PowerPAK® SC-75-6L Dual