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SIA911EDJ-T1-GE3 Datasheet

SIA911EDJ-T1-GE3 Cover
DatasheetSIA911EDJ-T1-GE3
File Size117.32 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIA911EDJ-T1-GE3
Description MOSFET 2P-CH 20V 4.5A SC70-6

SIA911EDJ-T1-GE3 - Vishay Siliconix

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SIA911EDJ-T1-GE3 SIA911EDJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6 389

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SIA911EDJ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.5A

Rds On (Max) @ Id, Vgs

101mOhm @ 2.7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

7.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SC-70-6 Dual

Supplier Device Package

PowerPAK® SC-70-6 Dual