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| Datasheet | SIA778DJ-T1-GE3 |
| File Size | 153.18 KB |
| Total Pages | 12 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIA778DJ-T1-GE3 |
| Description | MOSFET 2N-CH 12V/20V SC70-6 |
SIA778DJ-T1-GE3 - Vishay Siliconix
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URL Link
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 12V, 20V Current - Continuous Drain (Id) @ 25°C 4.5A, 1.5A Rds On (Max) @ Id, Vgs 29mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 500pF @ 6V Power - Max 6.5W, 5W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-70-6 Dual Supplier Device Package PowerPAK® SC-70-6 Dual |