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SIA511DJ-T1-GE3 Datasheet

SIA511DJ-T1-GE3 Cover
DatasheetSIA511DJ-T1-GE3
File Size133.09 KB
Total Pages12
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIA511DJ-T1-GE3
Description MOSFET N/P-CH 12V 4.5A SC70-6

SIA511DJ-T1-GE3 - Vishay Siliconix

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URL Link

SIA511DJ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4.5A

Rds On (Max) @ Id, Vgs

40mOhm @ 4.2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 6V

Power - Max

6.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SC-70-6 Dual

Supplier Device Package

PowerPAK® SC-70-6 Dual