Datasheet | SIA465EDJ-T1-GE3 |
File Size | 252.03 KB |
Total Pages | 9 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SIA465EDJ-T1-GE3 |
Description | MOSFET P-CH 20V 12A SC70-6 |
SIA465EDJ-T1-GE3 - Vishay Siliconix
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SIA465EDJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC70-6 | 496 More on Order |
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Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 16.5mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2130pF @ 10V FET Feature - Power Dissipation (Max) 19W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6 |