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SIA450DJ-T1-GE3 Datasheet

SIA450DJ-T1-GE3 Cover
DatasheetSIA450DJ-T1-GE3
File Size105.18 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SIA450DJ-T1-GE3, SIA450DJ-T1-E3
Description MOSFET N-CH 240V 1.52A SC70-6, MOSFET N-CH 240V 1.52A SC70-6

SIA450DJ-T1-GE3 - Vishay Siliconix

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URL Link

SIA450DJ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

240V

Current - Continuous Drain (Id) @ 25°C

1.52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

2.9Ohm @ 700mA, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.04nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

167pF @ 120V

FET Feature

-

Power Dissipation (Max)

3.3W (Ta), 15W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6

SIA450DJ-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

240V

Current - Continuous Drain (Id) @ 25°C

1.52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

2.9Ohm @ 700mA, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.04nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

167pF @ 120V

FET Feature

-

Power Dissipation (Max)

3.3W (Ta), 15W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6