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SIA411DJ-T1-GE3 Datasheet

SIA411DJ-T1-GE3 Cover
DatasheetSIA411DJ-T1-GE3
File Size104.8 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SIA411DJ-T1-GE3, SIA411DJ-T1-E3
Description MOSFET P-CH 20V 12A SC70-6, MOSFET P-CH 20V 12A SC70-6

SIA411DJ-T1-GE3 - Vishay Siliconix

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URL Link

SIA411DJ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

30mOhm @ 5.9A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.5W (Ta), 19W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6

SIA411DJ-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

30mOhm @ 5.9A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.5W (Ta), 19W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6