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SI9936DY Datasheet

SI9936DY,518 Cover
DatasheetSI9936DY,518
File Size260.66 KB
Total Pages13
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI9936DY,518
Description MOSFET 2N-CH 30V 5A SOT96-1

SI9936DY,518 - NXP

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SI9936DY,518 SI9936DY,518 NXP MOSFET 2N-CH 30V 5A SOT96-1 313

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URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5A

Rds On (Max) @ Id, Vgs

50mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

900mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO