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SI8902AEDB-T2-E1 Datasheet

SI8902AEDB-T2-E1 Cover
DatasheetSI8902AEDB-T2-E1
File Size245.9 KB
Total Pages11
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI8902AEDB-T2-E1
Description N-CHANNEL 24-V (D-S) MOSFET

SI8902AEDB-T2-E1 - Vishay Siliconix

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SI8902AEDB-T2-E1 SI8902AEDB-T2-E1 Vishay Siliconix N-CHANNEL 24-V (D-S) MOSFET 487

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SI8902AEDB-T2-E1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

24V

Current - Continuous Drain (Id) @ 25°C

11A

Rds On (Max) @ Id, Vgs

28mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

5.7W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-UFBGA

Supplier Device Package

6-Micro Foot™ (1.5x1)