Top

SI8809EDB-T2-E1 Datasheet

SI8809EDB-T2-E1 Cover
DatasheetSI8809EDB-T2-E1
File Size140.32 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI8809EDB-T2-E1
Description MOSFET P-CH 20V 1.9A MICROFOOT

SI8809EDB-T2-E1 - Vishay Siliconix

SI8809EDB-T2-E1 Datasheet Page 1
SI8809EDB-T2-E1 Datasheet Page 2
SI8809EDB-T2-E1 Datasheet Page 3
SI8809EDB-T2-E1 Datasheet Page 4
SI8809EDB-T2-E1 Datasheet Page 5
SI8809EDB-T2-E1 Datasheet Page 6
SI8809EDB-T2-E1 Datasheet Page 7
SI8809EDB-T2-E1 Datasheet Page 8

The Products You May Be Interested In

SI8809EDB-T2-E1 SI8809EDB-T2-E1 Vishay Siliconix MOSFET P-CH 20V 1.9A MICROFOOT 355

More on Order

URL Link

SI8809EDB-T2-E1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

90mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-Microfoot

Package / Case

4-XFBGA