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SI8457DB-T1-E1 Datasheet

SI8457DB-T1-E1 Cover
DatasheetSI8457DB-T1-E1
File Size253.02 KB
Total Pages11
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI8457DB-T1-E1
Description MOSFET P-CH 12V MICROFOOT

SI8457DB-T1-E1 - Vishay Siliconix

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SI8457DB-T1-E1 SI8457DB-T1-E1 Vishay Siliconix MOSFET P-CH 12V MICROFOOT 498

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URL Link

SI8457DB-T1-E1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

19mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

93nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 6V

FET Feature

-

Power Dissipation (Max)

1.1W (Ta), 2.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-MICRO FOOT® (1.6x1.6)

Package / Case

4-UFBGA