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SI8416DB-T1-GE3 Datasheet

SI8416DB-T1-GE3 Cover
DatasheetSI8416DB-T1-GE3
File Size168.83 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI8416DB-T1-GE3, SI8416DB-T2-E1
Description MOSFET N-CH 8V 16A MICRO, MOSFET N-CH 8V 16A MICRO

SI8416DB-T1-GE3 - Vishay Siliconix

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SI8416DB-T2-E1 SI8416DB-T2-E1 Vishay Siliconix MOSFET N-CH 8V 16A MICRO 607

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URL Link

SI8416DB-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

23mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 4.5V

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

1470pF @ 4V

FET Feature

-

Power Dissipation (Max)

2.77W (Ta), 13W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-microfoot

Package / Case

6-UFBGA

SI8416DB-T2-E1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

23mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 4.5V

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

1470pF @ 4V

FET Feature

-

Power Dissipation (Max)

2.77W (Ta), 13W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-Micro Foot™ (1.5x1)

Package / Case

6-UFBGA