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SI8410DB-T2-E1 Datasheet

SI8410DB-T2-E1 Cover
DatasheetSI8410DB-T2-E1
File Size163.89 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI8410DB-T2-E1
Description MOSFET N-CH 20V MICROFOOT

SI8410DB-T2-E1 - Vishay Siliconix

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URL Link

SI8410DB-T2-E1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

37mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

850mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

620pF @ 10V

FET Feature

-

Power Dissipation (Max)

780mW (Ta), 1.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-Micro Foot (1x1)

Package / Case

4-UFBGA