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SI7997DP-T1-GE3 Datasheet

SI7997DP-T1-GE3 Cover
DatasheetSI7997DP-T1-GE3
File Size311.15 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI7997DP-T1-GE3
Description MOSFET 2P-CH 30V 60A PPAK SO-8

SI7997DP-T1-GE3 - Vishay Siliconix

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URL Link

SI7997DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

60A

Rds On (Max) @ Id, Vgs

5.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

6200pF @ 15V

Power - Max

46W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual