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SI7964DP-T1-GE3 Datasheet

SI7964DP-T1-GE3 Cover
DatasheetSI7964DP-T1-GE3
File Size91.72 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI7964DP-T1-GE3, SI7964DP-T1-E3
Description MOSFET 2N-CH 60V 6.1A PPAK SO-8, MOSFET 2N-CH 60V 6.1A PPAK SO-8

SI7964DP-T1-GE3 - Vishay Siliconix

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URL Link

SI7964DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

6.1A

Rds On (Max) @ Id, Vgs

23mOhm @ 9.6A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual

SI7964DP-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

6.1A

Rds On (Max) @ Id, Vgs

23mOhm @ 9.6A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual