Top

SI7958DP-T1-GE3 Datasheet

SI7958DP-T1-GE3 Cover
DatasheetSI7958DP-T1-GE3
File Size140.19 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI7958DP-T1-GE3, SI7958DP-T1-E3
Description MOSFET 2N-CH 40V 7.2A PPAK SO-8, MOSFET 2N-CH 40V 7.2A PPAK SO-8

SI7958DP-T1-GE3 - Vishay Siliconix

SI7958DP-T1-GE3 Datasheet Page 1
SI7958DP-T1-GE3 Datasheet Page 2
SI7958DP-T1-GE3 Datasheet Page 3
SI7958DP-T1-GE3 Datasheet Page 4
SI7958DP-T1-GE3 Datasheet Page 5
SI7958DP-T1-GE3 Datasheet Page 6

The Products You May Be Interested In

SI7958DP-T1-GE3 SI7958DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 7.2A PPAK SO-8 332

More on Order

SI7958DP-T1-E3 SI7958DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 40V 7.2A PPAK SO-8 589

More on Order

URL Link

SI7958DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

7.2A

Rds On (Max) @ Id, Vgs

16.5mOhm @ 11.3A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual

SI7958DP-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

7.2A

Rds On (Max) @ Id, Vgs

16.5mOhm @ 11.3A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual