Top

SI7946DP-T1-GE3 Datasheet

SI7946DP-T1-GE3 Cover
DatasheetSI7946DP-T1-GE3
File Size94.79 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI7946DP-T1-GE3, SI7946DP-T1-E3
Description MOSFET 2N-CH 150V 2.1A PPAK SO-8, MOSFET 2N-CH 150V 2.1A PPAK SO-8

SI7946DP-T1-GE3 - Vishay Siliconix

SI7946DP-T1-GE3 Datasheet Page 1
SI7946DP-T1-GE3 Datasheet Page 2
SI7946DP-T1-GE3 Datasheet Page 3
SI7946DP-T1-GE3 Datasheet Page 4
SI7946DP-T1-GE3 Datasheet Page 5
SI7946DP-T1-GE3 Datasheet Page 6

The Products You May Be Interested In

SI7946DP-T1-GE3 SI7946DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 150V 2.1A PPAK SO-8 568

More on Order

SI7946DP-T1-E3 SI7946DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 150V 2.1A PPAK SO-8 562

More on Order

URL Link

SI7946DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

2.1A

Rds On (Max) @ Id, Vgs

150mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual

SI7946DP-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

2.1A

Rds On (Max) @ Id, Vgs

150mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual