Top

SI7925DN-T1-GE3 Datasheet

SI7925DN-T1-GE3 Cover
DatasheetSI7925DN-T1-GE3
File Size112.37 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI7925DN-T1-GE3, SI7925DN-T1-E3
Description MOSFET 2P-CH 12V 4.8A 1212-8, MOSFET 2P-CH 12V 4.8A 1212-8

SI7925DN-T1-GE3 - Vishay Siliconix

SI7925DN-T1-GE3 Datasheet Page 1
SI7925DN-T1-GE3 Datasheet Page 2
SI7925DN-T1-GE3 Datasheet Page 3
SI7925DN-T1-GE3 Datasheet Page 4
SI7925DN-T1-GE3 Datasheet Page 5
SI7925DN-T1-GE3 Datasheet Page 6

The Products You May Be Interested In

SI7925DN-T1-GE3 SI7925DN-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.8A 1212-8 657

More on Order

SI7925DN-T1-E3 SI7925DN-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 4.8A 1212-8 531

More on Order

URL Link

SI7925DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4.8A

Rds On (Max) @ Id, Vgs

42mOhm @ 6.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.3W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8 Dual

Supplier Device Package

PowerPAK® 1212-8 Dual

SI7925DN-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4.8A

Rds On (Max) @ Id, Vgs

42mOhm @ 6.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.3W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8 Dual

Supplier Device Package

PowerPAK® 1212-8 Dual