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SI7900AEDN-T1-GE3 Datasheet

SI7900AEDN-T1-GE3 Cover
DatasheetSI7900AEDN-T1-GE3
File Size531.5 KB
Total Pages12
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI7900AEDN-T1-GE3, SI7900AEDN-T1-E3
Description MOSFET 2N-CH 20V 6A PPAK 1212-8, MOSFET 2N-CH 20V 6A 1212-8

SI7900AEDN-T1-GE3 - Vishay Siliconix

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URL Link

SI7900AEDN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A

Rds On (Max) @ Id, Vgs

26mOhm @ 8.5A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8 Dual

Supplier Device Package

PowerPAK® 1212-8 Dual

SI7900AEDN-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A

Rds On (Max) @ Id, Vgs

26mOhm @ 8.5A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8 Dual

Supplier Device Package

PowerPAK® 1212-8 Dual