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SI7882DP-T1-E3 Datasheet

SI7882DP-T1-E3 Cover
DatasheetSI7882DP-T1-E3
File Size80.56 KB
Total Pages5
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI7882DP-T1-E3, SI7882DP-T1-GE3
Description MOSFET N-CH 12V 13A PPAK SO-8, MOSFET N-CH 12V 13A PPAK SO-8

SI7882DP-T1-E3 - Vishay Siliconix

SI7882DP-T1-E3 Datasheet Page 1
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SI7882DP-T1-E3 Datasheet Page 5

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SI7882DP-T1-GE3 SI7882DP-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 13A PPAK SO-8 258

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URL Link

SI7882DP-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

13A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 17A, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.9W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

SI7882DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

13A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 17A, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.9W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8