Top

SI7655DN-T1-GE3 Datasheet

SI7655DN-T1-GE3 Cover
DatasheetSI7655DN-T1-GE3
File Size244.11 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI7655DN-T1-GE3
Description MOSFET P-CH 20V 40A PPAK 1212

SI7655DN-T1-GE3 - Vishay Siliconix

SI7655DN-T1-GE3 Datasheet Page 1
SI7655DN-T1-GE3 Datasheet Page 2
SI7655DN-T1-GE3 Datasheet Page 3
SI7655DN-T1-GE3 Datasheet Page 4
SI7655DN-T1-GE3 Datasheet Page 5
SI7655DN-T1-GE3 Datasheet Page 6
SI7655DN-T1-GE3 Datasheet Page 7
SI7655DN-T1-GE3 Datasheet Page 8
SI7655DN-T1-GE3 Datasheet Page 9

The Products You May Be Interested In

SI7655DN-T1-GE3 SI7655DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 40A PPAK 1212 353

More on Order

URL Link

SI7655DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

3.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

225nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

6600pF @ 10V

FET Feature

-

Power Dissipation (Max)

4.8W (Ta), 57W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8S (3.3x3.3)

Package / Case

PowerPAK® 1212-8S