Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI7601DN-T1-E3 |
| File Size | 112.89 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI7601DN-T1-E3, SI7601DN-T1-GE3 |
| Description | MOSFET P-CH 20V 16A 1212-8, MOSFET P-CH 20V 16A 1212-8 |
SI7601DN-T1-E3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI7601DN-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 16A 1212-8 | 343 More on Order |
 |
SI7601DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 16A 1212-8 | 291 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 19.2mOhm @ 11A, 4.5V Vgs(th) (Max) @ Id 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1870pF @ 10V FET Feature - Power Dissipation (Max) 3.8W (Ta), 52W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 19.2mOhm @ 11A, 4.5V Vgs(th) (Max) @ Id 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1870pF @ 10V FET Feature - Power Dissipation (Max) 3.8W (Ta), 52W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |