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SI7530DP-T1-E3 Datasheet

SI7530DP-T1-E3 Cover
DatasheetSI7530DP-T1-E3
File Size120.24 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI7530DP-T1-E3
Description MOSFET N/P-CH 60V 3A PPAK SO-8

SI7530DP-T1-E3 - Vishay Siliconix

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URL Link

SI7530DP-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

3A, 3.2A

Rds On (Max) @ Id, Vgs

75mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.4W, 1.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual