Top

SI7190DP-T1-GE3 Datasheet

SI7190DP-T1-GE3 Cover
DatasheetSI7190DP-T1-GE3
File Size309.7 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI7190DP-T1-GE3
Description MOSFET N-CH 250V 18.4A PPAK SO-8

SI7190DP-T1-GE3 - Vishay Siliconix

SI7190DP-T1-GE3 Datasheet Page 1
SI7190DP-T1-GE3 Datasheet Page 2
SI7190DP-T1-GE3 Datasheet Page 3
SI7190DP-T1-GE3 Datasheet Page 4
SI7190DP-T1-GE3 Datasheet Page 5
SI7190DP-T1-GE3 Datasheet Page 6
SI7190DP-T1-GE3 Datasheet Page 7
SI7190DP-T1-GE3 Datasheet Page 8
SI7190DP-T1-GE3 Datasheet Page 9
SI7190DP-T1-GE3 Datasheet Page 10
SI7190DP-T1-GE3 Datasheet Page 11
SI7190DP-T1-GE3 Datasheet Page 12
SI7190DP-T1-GE3 Datasheet Page 13

The Products You May Be Interested In

SI7190DP-T1-GE3 SI7190DP-T1-GE3 Vishay Siliconix MOSFET N-CH 250V 18.4A PPAK SO-8 8503

More on Order

URL Link

SI7190DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

18.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

118mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

72nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2214pF @ 125V

FET Feature

-

Power Dissipation (Max)

5.4W (Ta), 96W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8