Top

SI7148DP-T1-GE3 Datasheet

SI7148DP-T1-GE3 Cover
DatasheetSI7148DP-T1-GE3
File Size305.68 KB
Total Pages14
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI7148DP-T1-GE3, SI7148DP-T1-E3
Description MOSFET N-CH 75V 28A PPAK SO-8, MOSFET N-CH 75V 28A PPAK SO-8

SI7148DP-T1-GE3 - Vishay Siliconix

SI7148DP-T1-GE3 Datasheet Page 1
SI7148DP-T1-GE3 Datasheet Page 2
SI7148DP-T1-GE3 Datasheet Page 3
SI7148DP-T1-GE3 Datasheet Page 4
SI7148DP-T1-GE3 Datasheet Page 5
SI7148DP-T1-GE3 Datasheet Page 6
SI7148DP-T1-GE3 Datasheet Page 7
SI7148DP-T1-GE3 Datasheet Page 8
SI7148DP-T1-GE3 Datasheet Page 9
SI7148DP-T1-GE3 Datasheet Page 10
SI7148DP-T1-GE3 Datasheet Page 11
SI7148DP-T1-GE3 Datasheet Page 12
SI7148DP-T1-GE3 Datasheet Page 13
SI7148DP-T1-GE3 Datasheet Page 14

The Products You May Be Interested In

SI7148DP-T1-GE3 SI7148DP-T1-GE3 Vishay Siliconix MOSFET N-CH 75V 28A PPAK SO-8 141

More on Order

SI7148DP-T1-E3 SI7148DP-T1-E3 Vishay Siliconix MOSFET N-CH 75V 28A PPAK SO-8 52229

More on Order

URL Link

SI7148DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 35V

FET Feature

-

Power Dissipation (Max)

5.4W (Ta), 96W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

SI7148DP-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 35V

FET Feature

-

Power Dissipation (Max)

5.4W (Ta), 96W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8