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SI6975DQ-T1-E3 Datasheet

SI6975DQ-T1-E3 Cover
DatasheetSI6975DQ-T1-E3
File Size102.31 KB
Total Pages5
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI6975DQ-T1-E3, SI6975DQ-T1-GE3
Description MOSFET 2P-CH 12V 4.3A 8TSSOP, MOSFET 2P-CH 12V 4.3A 8TSSOP

SI6975DQ-T1-E3 - Vishay Siliconix

SI6975DQ-T1-E3 Datasheet Page 1
SI6975DQ-T1-E3 Datasheet Page 2
SI6975DQ-T1-E3 Datasheet Page 3
SI6975DQ-T1-E3 Datasheet Page 4
SI6975DQ-T1-E3 Datasheet Page 5

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URL Link

SI6975DQ-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4.3A

Rds On (Max) @ Id, Vgs

27mOhm @ 5.1A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 5mA (Min)

Gate Charge (Qg) (Max) @ Vgs

30nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

830mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

SI6975DQ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4.3A

Rds On (Max) @ Id, Vgs

27mOhm @ 5.1A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 5mA (Min)

Gate Charge (Qg) (Max) @ Vgs

30nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

830mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP