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SI6562DQ-T1-GE3 Datasheet

SI6562DQ-T1-GE3 Cover
DatasheetSI6562DQ-T1-GE3
File Size119.78 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI6562DQ-T1-GE3, SI6562DQ-T1-E3
Description MOSFET N/P-CH 20V 8-TSSOP, MOSFET N/P-CH 20V 8-TSSOP

SI6562DQ-T1-GE3 - Vishay Siliconix

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URL Link

SI6562DQ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

30mOhm @ 4.5A, 4.5V

Vgs(th) (Max) @ Id

600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

25nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

SI6562DQ-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

30mOhm @ 4.5A, 4.5V

Vgs(th) (Max) @ Id

600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

25nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP