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SI6562CDQ-T1-GE3 Datasheet

SI6562CDQ-T1-GE3 Cover
DatasheetSI6562CDQ-T1-GE3
File Size249.73 KB
Total Pages17
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI6562CDQ-T1-GE3
Description MOSFET N/P-CH 20V 6.7A 8-TSSOP

SI6562CDQ-T1-GE3 - Vishay Siliconix

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SI6562CDQ-T1-GE3 SI6562CDQ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 6.7A 8-TSSOP 3700

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URL Link

SI6562CDQ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6.7A, 6.1A

Rds On (Max) @ Id, Vgs

22mOhm @ 5.7A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 10V

Power - Max

1.6W, 1.7W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP