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SI5517DU-T1-E3 Datasheet

SI5517DU-T1-E3 Cover
DatasheetSI5517DU-T1-E3
File Size170.95 KB
Total Pages14
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI5517DU-T1-E3, SI5517DU-T1-GE3
Description MOSFET N/P-CH 20V 6A CHIPFET, MOSFET N/P-CH 20V 6A CHIPFET

SI5517DU-T1-E3 - Vishay Siliconix

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URL Link

SI5517DU-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A

Rds On (Max) @ Id, Vgs

39mOhm @ 4.4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds

520pF @ 10V

Power - Max

8.3W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® ChipFET™ Dual

Supplier Device Package

PowerPAK® ChipFet Dual

SI5517DU-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A

Rds On (Max) @ Id, Vgs

39mOhm @ 4.4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds

520pF @ 10V

Power - Max

8.3W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® ChipFET™ Dual

Supplier Device Package

PowerPAK® ChipFet Dual