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SI5486DU-T1-GE3 Datasheet

SI5486DU-T1-GE3 Cover
DatasheetSI5486DU-T1-GE3
File Size155.84 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI5486DU-T1-GE3, SI5486DU-T1-E3
Description MOSFET N-CH 20V 12A PPAK CHIPFET, MOSFET N-CH 20V 12A PPAK CHIPFET

SI5486DU-T1-GE3 - Vishay Siliconix

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URL Link

SI5486DU-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

15mOhm @ 7.7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

2100pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 31W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PowerPak® ChipFet (3x1.9)

Package / Case

8-PowerVDFN

SI5486DU-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

15mOhm @ 7.7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

2100pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 31W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PowerPak® ChipFet (3x1.9)

Package / Case

8-PowerVDFN