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SI5475DC-T1-GE3 Datasheet

SI5475DC-T1-GE3 Cover
DatasheetSI5475DC-T1-GE3
File Size110.49 KB
Total Pages5
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI5475DC-T1-GE3, SI5475DC-T1-E3
Description MOSFET P-CH 12V 5.5A 1206-8, MOSFET P-CH 12V 5.5A 1206-8

SI5475DC-T1-GE3 - Vishay Siliconix

SI5475DC-T1-GE3 Datasheet Page 1
SI5475DC-T1-GE3 Datasheet Page 2
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SI5475DC-T1-GE3 Datasheet Page 5

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URL Link

SI5475DC-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

5.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

31mOhm @ 5.5A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 1mA (Min)

Gate Charge (Qg) (Max) @ Vgs

29nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

1206-8 ChipFET™

Package / Case

8-SMD, Flat Lead

SI5475DC-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

5.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

31mOhm @ 5.5A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 1mA (Min)

Gate Charge (Qg) (Max) @ Vgs

29nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

1206-8 ChipFET™

Package / Case

8-SMD, Flat Lead