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SI4967DY-T1-GE3 Datasheet

SI4967DY-T1-GE3 Cover
DatasheetSI4967DY-T1-GE3
File Size99.2 KB
Total Pages5
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI4967DY-T1-GE3, SI4967DY-T1-E3
Description MOSFET 2P-CH 12V 8SOIC, MOSFET 2P-CH 12V 8SOIC

SI4967DY-T1-GE3 - Vishay Siliconix

SI4967DY-T1-GE3 Datasheet Page 1
SI4967DY-T1-GE3 Datasheet Page 2
SI4967DY-T1-GE3 Datasheet Page 3
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SI4967DY-T1-GE3 Datasheet Page 5

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URL Link

SI4967DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

23mOhm @ 7.5A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

SI4967DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

23mOhm @ 7.5A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO