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SI4952DY-T1-E3 Datasheet

SI4952DY-T1-E3 Cover
DatasheetSI4952DY-T1-E3
File Size172.02 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI4952DY-T1-E3, SI4952DY-T1-GE3
Description MOSFET 2N-CH 25V 8A 8-SOIC, MOSFET 2N-CH 25V 8A 8-SOIC

SI4952DY-T1-E3 - Vishay Siliconix

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URL Link

SI4952DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

8A

Rds On (Max) @ Id, Vgs

23mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

680pF @ 13V

Power - Max

2.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

SI4952DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

8A

Rds On (Max) @ Id, Vgs

23mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

680pF @ 13V

Power - Max

2.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO