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SI4946CDY-T1-GE3 Datasheet

SI4946CDY-T1-GE3 Cover
DatasheetSI4946CDY-T1-GE3
File Size226.07 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI4946CDY-T1-GE3
Description MOSFET N-CHAN DUAL 60V SO-8

SI4946CDY-T1-GE3 - Vishay Siliconix

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URL Link

SI4946CDY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

5.2A (Ta), 6.1A (Tc)

Rds On (Max) @ Id, Vgs

40.9mOhm @ 5.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 30V

Power - Max

2W (Ta), 2.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO