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SI4943BDY-T1-GE3 Datasheet

SI4943BDY-T1-GE3 Cover
DatasheetSI4943BDY-T1-GE3
File Size160.2 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI4943BDY-T1-GE3, SI4943BDY-T1-E3
Description MOSFET 2P-CH 20V 6.3A 8-SOIC, MOSFET 2P-CH 20V 6.3A 8-SOIC

SI4943BDY-T1-GE3 - Vishay Siliconix

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URL Link

SI4943BDY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6.3A

Rds On (Max) @ Id, Vgs

19mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

SI4943BDY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6.3A

Rds On (Max) @ Id, Vgs

19mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO