Top

SI4940DY-T1-GE3 Datasheet

SI4940DY-T1-GE3 Cover
DatasheetSI4940DY-T1-GE3
File Size94.76 KB
Total Pages5
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI4940DY-T1-GE3, SI4940DY-T1-E3
Description MOSFET 2N-CH 40V 4.2A 8-SOIC, MOSFET 2N-CH 40V 4.2A 8-SOIC

SI4940DY-T1-GE3 - Vishay Siliconix

SI4940DY-T1-GE3 Datasheet Page 1
SI4940DY-T1-GE3 Datasheet Page 2
SI4940DY-T1-GE3 Datasheet Page 3
SI4940DY-T1-GE3 Datasheet Page 4
SI4940DY-T1-GE3 Datasheet Page 5

The Products You May Be Interested In

SI4940DY-T1-GE3 SI4940DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 4.2A 8-SOIC 338

More on Order

SI4940DY-T1-E3 SI4940DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 40V 4.2A 8-SOIC 325

More on Order

URL Link

SI4940DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

4.2A

Rds On (Max) @ Id, Vgs

36mOhm @ 5.7A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

SI4940DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

4.2A

Rds On (Max) @ Id, Vgs

36mOhm @ 5.7A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO