Top

SI4936CDY-T1-E3 Datasheet

SI4936CDY-T1-E3 Cover
DatasheetSI4936CDY-T1-E3
File Size184.74 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI4936CDY-T1-E3, SI4936CDY-T1-GE3
Description MOSFET 2N-CH 30V 5.8A 8SO, MOSFET 2N-CH 30V 5.8A 8-SOIC

SI4936CDY-T1-E3 - Vishay Siliconix

SI4936CDY-T1-E3 Datasheet Page 1
SI4936CDY-T1-E3 Datasheet Page 2
SI4936CDY-T1-E3 Datasheet Page 3
SI4936CDY-T1-E3 Datasheet Page 4
SI4936CDY-T1-E3 Datasheet Page 5
SI4936CDY-T1-E3 Datasheet Page 6
SI4936CDY-T1-E3 Datasheet Page 7
SI4936CDY-T1-E3 Datasheet Page 8
SI4936CDY-T1-E3 Datasheet Page 9

The Products You May Be Interested In

SI4936CDY-T1-E3 SI4936CDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 5.8A 8SO 475

More on Order

SI4936CDY-T1-GE3 SI4936CDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 5.8A 8-SOIC 28009

More on Order

URL Link

SI4936CDY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.8A

Rds On (Max) @ Id, Vgs

40mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

325pF @ 15V

Power - Max

2.3W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

SI4936CDY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.8A

Rds On (Max) @ Id, Vgs

40mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

325pF @ 15V

Power - Max

2.3W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO