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SI4892DY-T1-GE3 Datasheet

SI4892DY-T1-GE3 Cover
DatasheetSI4892DY-T1-GE3
File Size88.1 KB
Total Pages5
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI4892DY-T1-GE3, SI4892DY-T1-E3
Description MOSFET N-CH 30V 8.8A 8-SOIC, MOSFET N-CH 30V 8.8A 8-SOIC

SI4892DY-T1-GE3 - Vishay Siliconix

SI4892DY-T1-GE3 Datasheet Page 1
SI4892DY-T1-GE3 Datasheet Page 2
SI4892DY-T1-GE3 Datasheet Page 3
SI4892DY-T1-GE3 Datasheet Page 4
SI4892DY-T1-GE3 Datasheet Page 5

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URL Link

SI4892DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 12.4A, 10V

Vgs(th) (Max) @ Id

800mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

SI4892DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 12.4A, 10V

Vgs(th) (Max) @ Id

800mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)