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SI4562DY-T1-E3 Datasheet

SI4562DY-T1-E3 Cover
DatasheetSI4562DY-T1-E3
File Size127.48 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI4562DY-T1-E3, SI4562DY-T1-GE3
Description MOSFET N/P-CH 20V 8-SOIC, MOSFET N/P-CH 20V 8-SOIC

SI4562DY-T1-E3 - Vishay Siliconix

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URL Link

SI4562DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

25mOhm @ 7.1A, 4.5V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

SI4562DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

25mOhm @ 7.1A, 4.5V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO