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SI4561DY-T1-E3 Datasheet

SI4561DY-T1-E3 Cover
DatasheetSI4561DY-T1-E3
File Size137.51 KB
Total Pages12
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI4561DY-T1-E3, SI4561DY-T1-GE3
Description MOSFET N/P-CH 40V 6.8A 8-SOIC, MOSFET N/P-CH 40V 6.8A 8-SOIC

SI4561DY-T1-E3 - Vishay Siliconix

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SI4561DY-T1-GE3 SI4561DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 6.8A 8-SOIC 423

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URL Link

SI4561DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

6.8A, 7.2A

Rds On (Max) @ Id, Vgs

35.5mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

640pF @ 20V

Power - Max

3W, 3.3W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

SI4561DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

6.8A, 7.2A

Rds On (Max) @ Id, Vgs

35.5mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

640pF @ 20V

Power - Max

3W, 3.3W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO