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SI4532ADY-T1-GE3 Datasheet

SI4532ADY-T1-GE3 Cover
DatasheetSI4532ADY-T1-GE3
File Size178.23 KB
Total Pages10
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI4532ADY-T1-GE3, SI4532ADY-T1-E3
Description MOSFET N/P-CH 30V 3.7A 8-SOIC, MOSFET N/P-CH 30V 3.7A 8-SOIC

SI4532ADY-T1-GE3 - Vishay Siliconix

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SI4532ADY-T1-E3 SI4532ADY-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V 3.7A 8-SOIC 488

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URL Link

SI4532ADY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.7A, 3A

Rds On (Max) @ Id, Vgs

53mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.13W, 1.2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

SI4532ADY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.7A, 3A

Rds On (Max) @ Id, Vgs

53mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.13W, 1.2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO