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SI4501BDY-T1-GE3 Datasheet

SI4501BDY-T1-GE3 Cover
DatasheetSI4501BDY-T1-GE3
File Size206.32 KB
Total Pages14
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI4501BDY-T1-GE3
Description MOSFET N/P-CH 30V/8V 8SOIC

SI4501BDY-T1-GE3 - Vishay Siliconix

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SI4501BDY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel, Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V, 8V

Current - Continuous Drain (Id) @ 25°C

12A, 8A

Rds On (Max) @ Id, Vgs

17mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

805pF @ 15V

Power - Max

4.5W, 3.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC