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SI4500BDY-T1-GE3 Datasheet

SI4500BDY-T1-GE3 Cover
DatasheetSI4500BDY-T1-GE3
File Size133.6 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI4500BDY-T1-GE3, SI4500BDY-T1-E3
Description MOSFET N/P-CH 20V 6.6A 8-SOIC, MOSFET N/P-CH 20V 6.6A 8SOIC

SI4500BDY-T1-GE3 - Vishay Siliconix

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SI4500BDY-T1-GE3 SI4500BDY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 6.6A 8-SOIC 218

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SI4500BDY-T1-E3 SI4500BDY-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 6.6A 8SOIC 397

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URL Link

SI4500BDY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel, Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6.6A, 3.8A

Rds On (Max) @ Id, Vgs

20mOhm @ 9.1A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.3W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

SI4500BDY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel, Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6.6A, 3.8A

Rds On (Max) @ Id, Vgs

20mOhm @ 9.1A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.3W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO